Weak localization in CdO thin films prepared by sol–gel method

Abstract This paper reports the study of the magnetotransport properties of polycrystalline CdO thin films prepared by the sol–gel method. Both the sheet resistance and electron density as a function of temperature indicate that our samples are degenerate semiconductors. The weak localization (WL) effect is observed in the low temperature range. Applying the two-dimensional WL theory, we have extracted the dephasing length and a relatively large value (the maximum gets to 151 nm at 2 K) is obtained. The temperature dependence of the extracted dephasing length can be well described by the electron–electron scattering process, indicating that the electron–electron scattering is main dephasing mechanism for electrons.