1 MHz power factor correction boost converter with SiC Schottky diode

This paper deals with the design of 1 MHz switching frequency boost convert with silicon carbide power Schottky diodes. This application is designed to work as a power factor correction rectifier. With high breakdown voltage, high energy gap and good thermal conductivity, silicon carbide (SiC) is a serious challenger as a new power semiconductor material. Here we analyze switching behavior in order to evaluate losses in such applications. Then, we compare theoretical and experimental results on PFC boost application.