Textured (100) yttria-stabilized zirconia thin films deposited by plasma-enhanced chemical vapor deposition
1991
Thin films of yttria‐stabilized zirconia were deposited by plasma‐enhanced chemical vapor deposition on quartz Si(100), Si(111), Ni, and the steels V2A and hastelloy at substrate temperatures (Ts): 673–873 K. The metal β‐diketonates Y(thd)3 and Zr(thd)4 were used as precursors. The fully stabilized fluorite‐type cubic structure was obtained over a wide range of yttria contents from 3.5 to 80 mol % (Ts=773 K). The quality of the films depended on the match of the thermal expansion coefficients of substrate and deposit.
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