Thermoelectric effect in the graded band gap Si1–x Ge x (0.2 ≤ x ≤ 1), Si1–x Ge x (0.5 ≤ x ≤ 1) solid solutions dependent on the gap difference

The thermoelectric effect, i.e., appearance of thermally stimulated current and voltage during uniform heating in a temperature range from 30 to 250°C, is studied. It is shown that greatest values of the current and voltage appear when maximum band gap difference is observed.