Preparation of polycrystalline silicon thin films on glass by aluminium-induced crystallization
2011
Polycrystalline silicon (p-Si) is well-known as the high-efficency, low-cost, and most ideal material for manufacturing
photovoltaic devices. In recent years, excimer-laser annealing (ELA), metal-induced crystallization (MIC) and solidphase
crystallization (SPC) methods are employed to crystallize amorphous silicon (a-Si). In this paper, a cheap metal
induced crystallization method of fabricating p-Si thin films on an ordinary glass substrate was investigated. In this
synthesis process, a-Si thin film has been deposited onto glass substrates by Plasma Enhanced Chemical Vapor
Deposition (PECVD), and p-Si thin films have been fabricated by aluminium-induced crystallization (AIC) under
nitrogen ambient. The effects of annealing time, annealing temperature on the crystallization of a-Si were investigated by
X-ray diffraction (XRD) technique. Our results indicate that annealing temperature over 300°C is necessary for
crystallization of a-Si which preferred to orientation crystalline Si(111) and this preferred orientation becomes more
obvious as increasing of annealing time and annealing temperature. Meanwhile, the longer annealing time can produce
more a-Si crystallize completely under same aluminium thickness and annealing temperature.
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