Automotive Traction Inverter using the 4th Generation SiC MOSFET Power Module

Compared to silicon, a silicon carbide MOSFET has lower ON resistance and can switch faster, which makes it more efficient. The basic performance of the newly developed 4th generation SiC MOSFET(4G) from ROHM could be achieved performance improvement as reduction of ON resistance by 40% and less switching losses by 50% compared with current technology from ROHM which are contributed to realize better efficiency of application. Furthermore, the new package, which can enhance as suitable for SiC performance, has been successfully reduced parasitic inductance by 48% compared to conventional package in market. We also evaluated the performance of the system on energy consumption rate (ECR). ECR improvement of 7.8% in the WLTC and 8.1% in the CLTC compared to IGBT are confirmed.