A β-Ga2O3 MESFET to Amend the Carrier Distribution by using a Tunnel Diode

In this paper, a new metal-semiconductor field-effect transistor (MESFET) is introduced by amending the carrier distribution in the active regions of the device for radio frequency applications (RF). A quasi-two-dimensional material beta gallium oxide (β-Ga2O3) semiconductor is used as a fundamental material. To amend the carrier distribution, a tunnel diode (TD-βGO) is employed at the bottom of the source and the channel regions in the buried oxide (BOX) layer of MESFET. In our work, parameters such as the breakdown voltage, the self-heating effect, the kink effect, the parasitic capacitance, the power gains, the noise figure, and the carrier’s concentration are obtained and compared with the conventional structure. As a result of employing the tunnel diode, the TD-βGO MESFET has better characteristics in comparison with the C-βGO MESFET though the drain current at the saturation region in the TD-βGO structure is reduced.