Dark current characterization and simulation for In0.78Ga0.22As PIN photodetectors

The dark current characterization of In x Ga 1-x As with x =0.78 have been investigated. Meanwhile, the dark current related deep level trap with E t = 0.26 eV is detected by using Deep-Level Transient Spectroscopy (DLTS). 2D simulation of dark current shows that SRH recombination, trap-assisted tunneling and band-to-band tunneling currents are the main contributors to the dark current of In x Ga 1-x As( x=0.78) detector. To further improve the dark current characteristic, we need to improve the material growth.