Effect of isoelectronic substitution of thermopower and resistivity of Hf/sub 1-X/Zr/sub X/Te/sub 5/

1997 
The thermopower and resistance of single crystal pentatellurides in the series Hf/sub 1-X/Zr/sub X/Te/sub 5/(x=0, .25, .50, and 1.0) have been measured as a function of temperature from 10 K to 300 K. The results show that HfTe/sub 5/ and ZrTe/sub 5/ contain broad resistance peaks at a temperature, T/sub p/, of 76 K and 147 K respectively, which are in agreement with previous measurements. Both compounds possess relatively large p-type thermopower (/spl sim/+100 /spl mu/V/K) which decreases rapidly through zero at a temperature T/sub 0/ before changing to an equally large n-type thermopower (/spl sim/-100 /spl mu/V/K) at a temperature Tisoelectronic substitution of Zr for Hf (Hf/sub 1-X/Zr/sub X/Te/sub 5/), systematic shifts are observed in both T/sub p/ and T/sub 0/ as the Zr concentration increases. These ternary compounds retain the large p- and n-type thermopowers.
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