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Low Power and High Speed Bipolar Switching with A Thin Reactive Ti Layer in HfO2 Based RRAM
Low Power and High Speed Bipolar Switching with A Thin Reactive Ti Layer in HfO2 Based RRAM
2009
C.-H. Lien
H. Y. Lee
P. S. Chen
T. Y. Wu
Y.S. Chen
C. C. Wang
P-J Tzeng
F Chen
M.-J. Tsai
Keywords:
Resistive random-access memory
Electronic engineering
Materials science
Optoelectronics
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