Analysis of the temperature instability of an InAs/GaAs heterostructure during the process of molecular-beam epitaxy

It is established that, during the process of the molecular-beam epitaxy of InAs on a GaAs substrate, additional absorption of thermal radiation occurs as the film thickness increases, and, as a consequence, the heterostructure temperature becomes higher than the initial temperature in an uncontrolled way. The nonsteady-state mode of film growth leads to structure degradation. Calculation of the heterostructure overheating makes it possible to adjust the substrate temperature during growth.