Manufacturing method for epitaxial structure of enhanced injection type light-emitting diode

The invention discloses a manufacturing method for an epitaxial structure of an enhanced injection type light-emitting diode. The manufacturing method comprises: step one, at least one U/N-GaN single-crystal film grows on a substrate surface and a penetrating dislocation unit grows on the U/N-GaN single-crystal film; step two, a stress releasing layer grows on the U/N-GaN single-crystal film and a V-shaped groove is formed in the stress releasing layer; step three, a multi-quantum well active layer grows on the stress releasing layer having the V-shaped groove; step four, a P-AlGaN layer grows on the active layer; step five, annealing baking and removing of the multi-quantum well active layer on the part of or the overall V-shaped groove inclined surface is carried out at a N2/H2/NH3 mixed gas atmosphere; step six, a U-GaN layer grows to cover the V-shaped groove inclined surface and extends to the P-AlGaN layer; and step seven, a P-GaN layer grows to fill the V-shaped groove and covers the U-GaN layer extending to the P-AlGaN layer surface. According to the invention, effective injection of a hole can be increased; and the light emitting efficiency of the light-emitting diode can be improved.