Influence of Supply Voltage and Body Biasing on Single-Event Upsets and Single-Event Transients in UTBB FD–SOI

In this paper we present the effects of voltage scaling and forward body biasing on single-event effect sensitivity of a 28 nm UTBB FD–SOI technology. Heavy ion irradiation was performed for SEU and SET sensitivity assessment on characterization test chips under three supply voltages, with and without back-gate voltage application. Measurements show a steady SEU sensitivity for any supply voltage across the two FBB configurations, whereas SET sensitivity is diminished under FBB. SPICE and TCAD mixed-mode simulations were run to assess the contribution of electrical factors as well as charge extraction mechanisms. While drive strength is increased under FBB, the bipolar amplification plays an important role in sensitivity at low LETs.