Measurements of the critical resolved shear stress for indium-doped and undoped GaAs single crystals

Direct measurements of the critical resolved shear stress of undoped and indium‐doped GaAs single crystals at high temperatures have been performed using dynamical compression tests. At the melting point the critical resolved shear stress of GaAs:In is only twice that of undoped GaAs. At low temperatures, the activation energy for the motion of dislocations is not affected by indium doping. From these findings we conclude that crystallographic glide is not the only cause of dislocation formation in these GaAs crystals and solution hardening is not responsible for the reduction in dislocation density in GaAs:In.