Integrated Multi-Band RF Transceiver Design for Multi-standard Applications using 130 nm CMOS Technology

Abstract This paper presents high efficiency, high integration, and wideband low-IF radio frequency transceiver for multi-standard applications using 130 nm CMOS technology. The proposed low-IF transceiver includes receiver, transmitter, and quadrature voltage-controlled power oscillator (QVCO). The proposed receiver consists of a low-noise driver stage designed using Capacitive Cross-Coupling (CCC) common-gate configuration, and I/Q demodulator. While, the proposed transmitter composes of an I/Q modulator and an RF power amplifier, where the I/Q modulator consists of two up-conversion mixers, a five ports transformer along with switched capacitors bank for reconfigurable RF output matching. The proposed receiver has a frequency band of 0-10GHz, while the operating frequency of the proposed transmitter equals 1.5-4GHz. The proposed RF transceiver design is suitable for multi-band LTE, IOT, WSN, and multi-standard applications. The proposed receiver achieves a power gain of 15.4 dB, noise figure (NF) equals 3.8 dB, sensitivity equals -100.2 dBm and a dynamic range of 92.2 dBm. On the other hand, the proposed transmitter has a saturated output power of 23 dBm, power added efficiency (PAE) equals 41%, the power gain of 25 dB, and adjacent channel power ratio (ACPR) of equals -31.8dBc. The proposed receiver and transmitter consume 10.85 mW, and 180.95 mW, respectively, including the QVCO. The receiver and transmitter Figures of Merit (FoM) equal 191.5 dB and 2.45dB respectively. The active areas of the proposed receiver and transmitter equal 0.56 m m 2 and 1.6 m m 2 , respectively while the chip areas are 1.6 m m 2 and 2.4 m m 2 , respectively.