센서 재료 , 제조공정 및 기타 : PERL ( passivated emitter and rear locally - diffused cell ) 방식을 이용한 고효율 Si 태양전지의 제작 및 특성

The n^+/p/P^+ junction PERL solar cell of 0.1∼2 Ω·cm (100) p type silicon wafer was fabricated through the following steps; that is, wafer cutting, inverted pyramidally textured surfaces etching by KOH, phosphorus and boron diffusion, anti-reflection coating, grid formation and contact annealing. At this time, the optical characteristics of device surface and the efficiency of doping concentration for resistivity were investigated. And diffusion depth and doping concentration for n+ doping were simulated by silvaco program. Then their results were compared with measured results. Under the illumination of AM(air mass)1.5, 100 mW/㎠ I_(sc), V_(oc), fill factor and the conversion efficiency were 43mA. 0.6 V, 0.62. and 16% respectively.