Dynamic strain aging in Czochralski-grown silicon single crystals

Abstract Constant extension rate tensile tests were performed on dislocation-free Czochralski-grown ([ O ] = 24–38 ppma) silicon single crystals oriented for single slip in the temperature range 1173–1573 K. Evidence for dynamic strain aging, resulting from oxygen in solid solution, includes the observation of a plateau in the plot of the lower yield stress vs. strain rate at 1373, 1473, and 1573 K; an increase in the flow stress with temperature above 1373 K; a higher magnitude of the lower yield stress than that observed in float-zone (low-oxygen)-grown silicon for temperatures above 1373 K; and other observations resulting from the analysis of the later stages of deformation. Dynamic precipitation of oxygen caused by the supersaturated condition of oxygen in Czochralski-grown silicon complicates the application of solute hardening models for analyzing the experimental observations.