Gate stress induced threshold voltage instability and its significance for reliable threshold voltage measurement in p-GaN HEMT

In this study we investigate the effect induced by standard transfer characteristic measurement (I D -V G ) which is used to quantify threshold voltage (V th ), on threshold voltage (V th ) itself and a technique to mitigate this effect for a reliable V th measurement is proposed for a p-GaN gate AIGaN/GaN-on-SiHEMT. Time-dependent drain current (I D ) sampling measurements at low gate stress voltages (close to the nominal V th ) reveal the existence of a small-time range during which I D is stable (I Dstable -T zone ), before and after which I D marginally rises and substantially decays respectively. We find that both in the standard pulsed and DC step I D -V G measurements a change in pulse on-time (Ton) and step time (Tstep) respectively, can lead to a variation in the V th measured of up to 20%. This change is ascribed to the fact that the choice of Ton and Tstep affect the bias history experienced by the gate during I D -V G . Further, we demonstrate that by choosing Ton, Tstep such that the Id measurement happens in the aforementioned I Dstable -T zone extracted from the I D sampling measurements the gate is more stable and V th measured is closer to the quoted nominal value.