Acoustical phonon dephasing in GaAs quantum dots

Abstract We present results on the acoustical phonon dephasing for a single GaAs quantum dot. Micro photoluminescence ( μ -PL) is used to observe the temperature dependence of the exciton line in self-assembled GaAs semiconductor single quantum dots (QDs). The observation of the PL with temperature shows that there are two different states within the PL emission, namely the zero-phonon line and the phonon sidebands. When the temperature increases, the effect of the sidebands become clearer and show substantial broadening. In the present experiments, PL and μ -PL spectra have been measured at temperatures of 5 K≤ T ≤90 K for GaAs self-assembled QD samples.