Optical, electrical and contact properties of homoCVD a-Si: H films
1985
Abstract The optical and electrical properties of undoped HOMOCVD a-Si:H films are strikingly similar to those of GD films obtained over the same substrate temperature range. The contact properties studies reveled that the metals with θ m ⩽ 4.3 eV form a Schottky diode while those with θ m ≤ 4.3 eV form a quasi- or ohmic low resistance contact to undoped HOMOCVD a-Si:H films without a heavily doped layer at the interface.
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