Observation of Dislocation in a Silicon Single Crystal by X-Ray Plane Wave Topography

Using an asymmetric reflection of Si 220 by Mo–Kα 1 , images of lattice defects in a nearly perfect Silicon crystal were observed by plane-wave X-ray topography with parallel ( n , - n ) setting. Notable differences between defect images in this plane-wave topograph and in the Lang traverse topograph are reported.