Analysis of electronic transport properties of thin film CuIn(S,Se)2 solar cells based on electrodeposition

Abstract Electrodeposited CuIn(S,Se) 2 based solar cells with efficiencies of 10.4% and 7.1% are reported. Their electronic transport properties are examined as a function of temperature by admittance spectroscopy and dark-current–voltage measurements ( J ( V , T )). For all devices, admittance spectroscopy reveals two relative shallow defect levels located at 0.1 eV and 0.23 eV, respectively. For the device showing the lowest efficiency, an additional deep defect at 0.51 eV is probed. The presence of this defect is well correlated with the J ( V , T ) results which reveal an enhancement of a second recombination mechanism that we identify as an additional tunneling-assisted recombination path.