Selective crystallization of amorphous silicon thin film by a CW green laser

Abstract A simple and effective method for selective CW laser crystallization of a-Si (CLC) without pre-patterning of a-Si has been reported. By using a metallic shadow mask instead of a photolithographic process, we can reduce the process steps and time compared with a conventional CLC process. It shows very high performance – mobility of 173 cm 2 /s, I off of ∼10 −13  A @ V d  = −5 V, I on / I off of >10 8 – as a p-channel poly-Si TFT even without any pre-/post-treatment to improve TFT characteristics such as plasma hydrogenation.