ESD protection Diode with Guard Ring Layout Optimized for Latch-up Immunity Enhancement in FinFET technology

A novel ESD dual diode with stronger latch-up robustness has been proposed in FinFET technology. By inserting PW/NW straps, the proposed ESD diode can be built without changing DC-IV and ESD characteristics of conventional ESD diode. The experimental and simulation results demonstrate that the proposed structure has been successfully verified in FinFET CMOS platform.