An apparatus for producing an SiC single crystal with a double-walled crucible

The apparatus for producing an SiC single crystal (32) comprises a double-walled crucible (10) with a between an inner crucible wall (14) and an outer wall of the crucible (15) disposed thermal homogenization zone (19) and having a crucible inner zone (11). Within these there are a storage area (12) for a stock of solid SiC (30) and a crystal region (13), in which the SiC single crystal (32) grown on a SiC seed crystal (31). Outside the crucible (10), an inductive heating device (16) is arranged. In the homogenization zone (19) through the coil windings (161) to compensate the inductive heating device (16) generated inhomogeneities a temperature distribution.