Status & trends of devices technology for cryogenic power electronics

The cryogenic behaviour of power devices is summarised in this paper, with specific attention to high power devices. The paper presents a brief discussion into the parameters that affect silicon behaviour at cryogenic temperatures, and a comprehensive review of the known behaviour of commonly used power devices from 300 K down to 4 K. Discussion of materials other than silicon, with potentially improved performance, is also included. This paper concludes that majority carrier (unipolar) devices such as power MOSFETs or power JFETs are good for cryogenic application above liquid nitrogen temperature (77 K). Below this temperature, minority carrier (bipolar) devices such as IGBTs or FCTs are required.