Analyzing and Minimization Effect of Temperature Variation of 2:1 MUX Using FINFET

This paper proposes a Transmission gate based 2:1 MUX using FINFET (Fin Shaped Field Effect Transistor) using 45 nm CMOS technology. The mobility was enhanced in devices with taller fins due to increase tensile stress. We have estimated the Optimum Power, Optimum Current, Leakage Power, Leakage Current, Operating Power and Operating Current in different voltage supply 0.3, 0.5 and 0.7 V at different temperature such as 10, 27 and 50°C respectively. We have also calculated Duty cycle are 67.41, 54.48, 10.96, and 45.99 %, rise time are 0.277, 0.0013, 0.534, and 0.003 ps, Bandwidth are 3.502 GHz, 0.03 THz and 3.505 GHz, 0.07 THz, Frequency jitter are 5.24 GHz, 1.73 THz and 21.51 GHz, 1.199 THz. Period jitter are 3.424, 38.89, 21.51, and 1.707 ps in 0.7 and 0.5 V supply at 27 °C of FINFET as well as Transmission gate 2:1 MUX.