In adatom migration studies by reflection high‐energy electron diffraction oscillations on vicinal InAs(001) surfaces

The transition from growth by the formation and coalescence of two‐dimensional clusters to the growth by step advancement on vicinal InAs(001) surfaces has been examined during molecular‐beam epitaxy by the measurements of reflection high‐energy electron diffraction oscillations. The growth mode transition is compared with results from vicinal GaAs(001) surfaces and qualitatively analyzed on the basis of the surface migration and attachment kinetics of In adatoms.