A Temperature-Compensated Class-AB Parametric Residue Amplifier for SAR-Assisted Pipeline ADCs

A novel temperature compensated class-AB residue amplifier based on MOS parametric amplification to be used in high-speed SAR-assisted pipeline ADCs is presented in this paper. The proposed circuit has been designed in a 28-nm standard CMOS process with a 0.9 V nominal power supply. The simulated class-AB fully-dynamic parametric amplifier has an open-loop nominal gain of 6× V/V, while dissipates 550 μW at 1 GHz. It achieves a gain variation bounded to ±3 % across the junction temperature range of −40 °C to 125 °C and it reaches a power-to-conversion-speed ratio better than 5.5 × 10−13 W/Hz representing a factor of about 4 times of energy-efficiency improvement when compared with the state-of-the-art.