UV-induced SiC nanowire sensors

Ultraviolet (UV)-induced sensors based on a single SiC nanowire (NW) were fabricated and the photoelectric properties including I–V characteristics and time response of the UV sensors were studied. SiC NWs (NWs) were prepared through pyrolyzing a polymer precursor with ferrocene as the catalyst by a CVD route. To elucidate the physical mechanism giving rise to the photoelectrical response in SiC NW sensors, three kinds of contacts between electrodes and SiC NW were prepared, i.e. Schottky contact, p–n junction contact, and Ohmic contact. The photoelectric measurements of the device with Schottky contact indicates the lowest dark current and the largest photocurrent. The results suggest that photocurrent generated at SiC NW-electrode contacts is a result of the photovoltaic effect, in which a built-in electric field accelerates photo generated charge carriers to the electronic contacts. The UV sensors based on SiC NWs could be applied in a harsh environment due to the excellent physical stability and photoelectric properties.