Improved Electrical Characteristics of P-type Tunnel Field-Effect Transistor With Source-Pocket Junction Formed Using High-Angle Implantation

In this paper, a p-type tunnel field-effect transistor with source-pocket junction (SPTFET) has been presented. The source-pocket junction was formed at the interface between source and channel region using BF 2 high-angle implantation, which is helpful to reduce the tunneling distance and increase the carriers’ tunneling probability. Compared with the TFET without source-pocket junction, the fabricated SPTFET exhibits better electrical characteristics, such as large on-state current and small subthreshold swing.