Surface Morphology and Interface Reaction of Cu/SiO2/Si (111) Systems Prepared by Radio Frequency Magnetron Sputtering

The Cu thin films were prepared at room temperature by radio frequency magnetron sputtering on p-type Si (111) substrates. The surface morphology and interface reaction of Cu thin films were studied at different deposition condition by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The results show that the existence of the native silicon oxide layer suppresses the interdiffusion and interface reaction of Cu and Si. The formation of the copper-silicide phase is observed by XRD when the annealing temperature arrives at 450 °C.