One kind of a wafer surface polishing method tsv

TSV present invention provides a method of polishing a wafer surface, etching the first layer of copper plating treatment of the wafer surface with a blind bore TSV H2SO4 solution and a mixed solution of hydrogen peroxide; double-sided tape was then peeled off by thermal bonding the wafer to the ceramic disc , of wafer sample preparation; overall wafer polishing and then placed on a rotary attaching disc of the polishing pad removal of the copper layer; and finally removing the ceramic heating Ta or Ti-hours using an etching solution, removing the plated blind hole TSV wafer surface it is corresponding to Ta or Ti barrier layer, to complete the polishing of the wafer surface TSV. By increasing the micro-electroplating treatment on the wafer surface TSV blind hole, the blind hole plating to improve the surface state of the wafer, the polishing of the copper layer is conducive to reduce the cost of polishing; The process is simple, low cost, and can be applied to different wafer sizes and fragments; thermal release by using double-sided tape can improve the uniformity of the thickness of wafer sample preparation process, improve the surface quality of the wafer after polishing the wafer TSV blind hole plating.