InxGa1 xN performance as a band-gap-tunable photo-electrode in acidic and basic solutions

Abstract Performance of In x Ga 1− x N photo-electrodes at concentrations of In ranging from 0 to 100 % was investigated in basic and acidic solutions under 1 Sun illumination. Photocorrosive effects of In x Ga 1− x N samples in aqueous solutions are revealed and strategies for a more efficient use of these electrodes are discussed. Formation of Ga 2 O 3 phase and N 2 under photoanodic conditions can explain the photo-corrosive effect. It is shown that the product of charge carrier density and mobility, n × μ , scales with the photo-current density in GaN.