Synthesis and characterization of mist chemical vapor deposited aluminum titanium oxide films

Aluminium titanium oxide (Alalt;subagt;1–alt;iagt;xalt;/iagt;alt;/subagt;Tialt;/subagt;alt;iagt;alt;subagt;xalt;/subagt;alt;/iagt;alt;/subagt;Oalt;subagt;alt;iagt;yalt;/iagt;alt;/subagt;, an alloy of Alalt;subagt;2alt;/subagt;Oalt;subagt;3alt;/subagt; and TiOalt;subagt;2alt;/subagt;), an attractive high-κ dielectric material, were synthesized by mist chemical vapor deposition, utilizing Alalt;subagt;2alt;/subagt;Oalt;subagt;3alt;/subagt; and TiOalt;subagt;2alt;/subagt; precursors. X-ray diffraction investigations revealed that the Alalt;subagt;1–alt;iagt;xalt;/iagt;alt;/subagt;Tialt;subagt;alt;iagt;xalt;/iagt;alt;/subagt;Oalt;subagt;alt;iagt;yalt;/iagt;alt;/subagt; (0 alt; alt;iagt;xalt;/iagt; alt; 0.72) films deposited at 400 oC has amorphous-phase structure. It was found that the bandgap of the Alalt;subagt;1–alt;iagt;xalt;/iagt;alt;/subagt;Tialt;subagt;alt;iagt;xalt;/iagt;alt;/subagt;Oalt;subagt;alt;iagt;yalt;/iagt;alt;/subagt;, films decreases with increasing Ti composition. Moreover, the obtained refractive index, mass density and bandgap of Alalt;subagt;2alt;/subagt;Oalt;subagt;3alt;/subagt; and TiOalt;subagt;2alt;/subagt; films are all comparable to those reported for high-quality Alalt;subagt;2alt;/subagt;Oalt;subagt;3alt;/subagt; and TiOalt;subagt;2alt;/subagt; films deposited by atomic layer deposition.