Improved Resistance Switching Characteristics in Ti-Doped $\hbox{Yb}_{2}\hbox{O}_{3}$ for Resistive Nonvolatile Memory Devices

A conventional approach of doping to control the bistable resistance switching in Yb 2 O 3 was investigated for nonvolatile memory applications. With the help of Ti doping into oxide films during the process, better cycle-to-cycle resistance distribution and switching voltage uniformity were found due to modulation of current conduction mechanism from space-charge-limited current in Yb 2 O 3 to Schottky type in YbTiO x . The program/erase cycles with successive readout operation over 10 5 cycles can be achieved without any degradation. No data loss was found upon continuous readout process at both room temperature and 85°C. The Ni/YbTiO x /TaN memory is a promising candidate to be integrated into future memory processes.