Fabrication of back‐gated complementary metal‐oxide semiconductor devices using mixed and matched optical and x‐ray lithographies

A novel silicon‐on‐insulator‐based technology called silicon‐on‐insulator‐with‐active‐substrate (SOIAS) [I. Y. Yang, C. Vieri, A. Chandrakasan, and D. A. Antoniadis, in International Electron Device Meeting (IEEE, Washington, DC, 1995), p. 877] was developed for high performance and low power electronic systems, which takes advantage of established silicon processes such as chemical mechanical polishing, wafer bonding, and the various lithographic tools used for deep submicrometer patterning. This article demonstrates the fabrication of deep submicrometer back‐gated complementary metal‐oxide semiconductor devices and simple circuits on SOIAS substrates using optical and x‐ray lithographies with our mix‐and‐match strategy [I. Y. Yang, S. Silverman, J. Ferrera, K. Jackson, J. Carter, D. A. Antoniadis, and H. Smith, J. Vac. Sci. Technol. B 13, 2741 (1995)].