Terahertz Radiators Based on Silicon Carbide Avalanche Transit Time Sources—Part II: Avalanche Noise Characteristics

Small-signal noise simulations have been performed to explore the potency of avalanche transit time (ATT) oscillators based upon wide bandgap (WBG) semiconducting substances like 3C-SiC and type-IIb diamond (C) as millimeter-wave (mm-wave) and terahertz (THz) wave generators; noise characteristics of those sources have been compared with the DDR IMPATTs on the basis of traditional substance, i.e., Si. The simulation studies show that the WBG semiconductor-based IMPATT sources possess significantly poor noise performance than the conventional Si-based IMPATT sources. However, significantly better RF power delivery capability of WBG IMPATT sources makes them superior than Si IMPATTs for mm-wave and THz applications.