High temperature annealings of Sb and Sb/B heavily implanted silicon wafers studied by near grazing incidence fluorescence EXAFS

Abstract The relative proportion of substitutional Sb, precipitates of metallic antimony and vacancy complexes has been estimated in highly implanted dopant Si samples (2 and 5 × 10 16 ions/cm 2 ) annealed at 900°C. The most striking results is the strong Sb out-diffusion for Sb-only implanted specimens even for a short annealing time. On the contrary, Sb diffusivity is strongly decreased in the case of Sb/B co-implantation.