Effect of Hydrogen Radicals for Ion Implanted CVD Diamond Using Remote Hydrogen Plasma Treatment (RHPT)

Defects formation of Chemical Vapor Deposition (CVD) diamond on ⁴He 2+ irradiation and after remote hydrogen plasma treatment (RHPT) were investigated by cathodoluminescence (CL). As calculated in the TRIM simulation, the light elements of ⁴He 2+ can be penetrated into the diamond bulk structure at 3~4 ㎛ depth. The effects of the implantation region were observed when 5 keV~20 keV electron energy (insight 0.3~4.0 ㎛) of CL measurement was irradiated to diamond at temperature 80 K. After the RHPT, rehybridization of irradiation damaged diamond was studied. The intensity of 5RL center (intrinsic defect of C) was diminished. The 2.16 eV center (N-V center) occurring usually by annealing could not be seen after RHPT. The diamond was rehybridized by hydrogen radicals without etching and thermal degradation by the RHPT.