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Characterization at Atomic Scale of Epitaxially Grown In(0.14)Ga(0.86)As/GaAs(4*3) Surface
Characterization at Atomic Scale of Epitaxially Grown In(0.14)Ga(0.86)As/GaAs(4*3) Surface
2012
Shang Lintao
Luo Zijiang
Zhou Xun
Guo Xiang
Zhang Bi-Chan
He Hao
He Yequan
Ding Zhao
Keywords:
Crystallography
Epitaxy
Atomic units
Materials science
Optoelectronics
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