Old Web
English
Sign In
Acemap
>
Paper
>
Laplace DLTS studies of the 0.25-eV electron trap properties in n-GaN
Laplace DLTS studies of the 0.25-eV electron trap properties in n-GaN
2021
P. Kruszewski
Pawel Kaminski
Roman Kozłowski
Jaroslaw Zelazko
Robert Czernecki
Mike Leszczynski
Andrzej Turos
Keywords:
Laplace transform
Atomic physics
Penning trap
Materials science
Correction
Source
Cite
Save
Machine Reading By IdeaReader
40
References
0
Citations
NaN
KQI
[]