Power CoolMOS transistor electrothermal model for PSpice simulation

Electrothermal modeling and simulation of power electronics semiconductors are crucial for the efficient optimization of power electronics circuits and systems. For this purpose, accurate, but not too complex, electrothermal models of power semiconductors are needed for use in commercially available power electronic circuit simulators such as PSpice. In this paper, the electrothermal modeling of the power CoolMOS transistor using Pspice is carried out. The CoolMOS electrothermal model is implemented in PSpice circuit simulation platform using the standard components and Analog Behavior Modeling blocks. The Model consists of electrical and thermal part where their parameters are extracted from the manufacturer’s datasheet curves. The proposed electro-thermal model is able to represent the electrical and thermal behaviors accurately. The correctness of the proposed model was verified by comparing the simulation results with the manufacturer’s data-sheet curves. The achieved simulation results of the proposed model coincide well with the results of the datasheet.