On the Formation of Periodic Electric Field Domains in p-Si/SiGe Quantum Cascade Structures

The formation of domains in p Si/SiGe quantum cascade structures is considered, because this is one of mechanisms affecting the operation of quantum cascade lasers and other devics. Hole transport is described via scattering between quantized states belonging to neighbouring periods, caused by phonons, alloy disorder, and carrier-carrier interactions. The conditions for domain formation are found for examples of homogeneously and modulation doped cascades.