Bipolar-bias-voltage single photon detection device

The utility model discloses a bipolar-bias-voltage single photon detection device. The bipolar-bias-voltage single photon detection device includes an avalanche photodiode circuit, a positive/negative bipolar bias voltage generating circuit, a bipolar gate pulse generating circuit, a first transmission line transformer circuit, a second transmission line transformer circuit, a differential operational amplifier, and a high-speed comparator circuit used for identifying avalanche. The object of the utility model is to decrease the influences of dark count and after-pulses and improve detection efficiency and work frequency of a single photon detector. The above object of the utility model is realized through the following manners that: bipolar gate pulses are adopted to cooperate with bipolar direct current bias voltage to excite an avalanche photodiode; and positive avalanche signals and negative avalanche signals are detected; positive/negative gate pulse bias voltage is equivalent to the single-pole bias voltage of the sum of two gate pulse absolute amplitude values which is applied on the APD; and therefore, the excitation of the single photon avalanche of the APD can be facilitated under lower direct current bias voltage and higher gate pulse amplitude. Thus, the influences of dark count and?after-pulses can be reduced,?and detection efficiency and work?frequency of a single photon detector can be improved.