Mg x Zn1– x O/ZnO Quantum Well Photodetectors Fabricated by Radio-Frequency Magnetron Sputtering
2018
Mg
x
Zn
1-x
O/ZnO quantum well (QW) photodetectors were fabricated by a radio-frequency magnetron sputtering system. The QW structure largely reduced the leakage current, from 2.6 × 10
-7
to 1.0 × 10
-9
A, by a factor of 260. The reduced leakage current enhanced the photo-to-dark current ratio from 1.35 × 10
3
to 4.25 × 10
4
, a 32-fold increase for the photodetectors with the QW structure. The 340 nm/560 nm rejection ratio was increased by a magnitude of 5.6 compared to that of photodetectors without QW structure because the electron-hole pairs generated by low-energy photons were confined in the Mg
x
Zn
1-x
O/ZnO QW.
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