Powerful InAsSbP/InAsSb light emitting diodes grown by MOVPE

Abstract Mid-infrared light-emitting diodes (LEDs) operating in the 3.3–4.5 μm wavelength range at room temperature are produced on the basis of InAsSbP/InAsSb heterostructures. The photoluminescence of InAsSb layers and electroluminescence properties of LEDs are investigated. LEDs light-current characteristics are also studied. Fabricated were LEDs of “A” and “B” type, “A” being preferential for currents in excess of 200 mA, and “B” being better for the current range 0–200 mA. When operating at 5% duty cycle, at room temperature wavelength λ =3.4 μm the pulse power of the diodes is measured as 1.2 mW under 1.3 A drive current.