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TEM Observation of Lattice Defects in Si Generated by the Nitrogen Ion Implantation and by the Oxide Film
TEM Observation of Lattice Defects in Si Generated by the Nitrogen Ion Implantation and by the Oxide Film
2006
Koutarou Kihara
Masako Kuroki
Taichiro Fukumori
Yoshito Akashi
Koji Futagami
Keywords:
Nitrogen
Oxide
Ion implantation
Dislocation
Inorganic chemistry
Materials science
Silicon
lattice defects
Chemical engineering
Correction
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