Oxide field enhancement corrected time dependent dielectric breakdown of polyoxides

Abstract Time-to-breakdown ( t bd ) of polysilicon/polyoxide/polysilicon structures is investigated on small and large area capacitors. The ln( t bd ) versus 1/ E ox projection lines are corrected by using an average oxide field enhancement factor for the interface polysilicon/thermally grown polyoxide. A field acceleration factor G≈320 MV / cm in the time-to-breakdown projection line is obtained. It is shown that the fast prediction of time-to-breakdown can be achieved with short stress time measurements in structures of different area.