Effect of Oxygen Pressure on the Resistive Switching Behavior of Amorphous Pr0.7Ca0.3MnO3 Films

Resistiveswitchingbehaviorhasbeenobservedinbinaryoxides 1‐4 and perovskite oxides. 5‐9 In particular, Pr0.7Ca0.3MnO3 (PCMO)films have been studied extensively because they exhibit a reversible pulseinduced change in resistance, which is very useful for nonvolatile memory devices. 8 PCMO thin films are known to be p-type materials, andtheyshowbipolarresistiveswitchingbehavior. 5‐9 Recently,theinterestinReRAMdevicesfabricatedatlowtemperatures(≤200 ◦ C)has increased because these devices can be used in flexible electronics. 3,4 Moreover, films grown at low temperatures are preferred for integration of the oxide materials with existing technologies. The amorphous PCMO(APCMO)wasalsogrownontheITO/glasssubstrateandtheir switching properties have been investigated. 10 In this work, APCMO films were grown on TiN/SiO2/Si substrate under various oxygen pressures (OPs) using a pulsed laser deposition (PLD) method, and their microstructure and resistive switching behavior were investigated. Moreover, the resistive switching behaviors of the APCMO films were explained by the trap-charged space-charge-limited current (SCLC) mechanism. Experimental